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  ?2000 fairchild semiconductor international rev. a, february 2000 bd534/536/538 pnp epitaxial silicon transistor absolute maximum ratings t c =25 c unless otherwise noted electrical characteristics t c =25 c unless otherwise noted * pulse test: pw =300 s, duty cycle =1.5% pulsed symbol parameter value units v cbo collector-base voltage : bd534 : bd536 : bd538 - 45 - 60 - 80 v v v v ceo collector-emitter voltage : bd534 : bd536 : bd538 - 45 - 60 - 80 v v v v ebo emitter-base voltage - 5 v i c collector current (dc) - 8 a i b base current - 1 a p c collector dissipation (t c =25 c) 50 w t j junction temperature 150 c t stg storage temperature - 65 ~ 150 c symbol parameter test condition min. typ. max. units i cbo collector cut-off current : bd534 : bd536 : bd538 v cb = - 45v, i e = 0 v cb = - 60v, i e = 0 v cb = - 80v, i e = 0 - 100 - 100 - 100 a a a i ces collector cut-off current : bd534 : bd536 : bd538 v ce = - 45v, v be = 0 v ce = - 60v, v be = 0 v ce = - 80v, v be = 0 - 100 - 100 - 100 a a a i ebo emitter cut-off current v eb = - 5v, i c = 0 - 1 ma h fe * dc current gain : all device : bd534/536 : bd538 : bd534/536 : bd538 v ce = -2 v, i c = - 500ma v ce = - 5v, i c = - 10ma v ce = - 2v, i c = - 2a 40 20 15 25 15 h fe h fe groups j : all device k : all device v ce = - 2v, i c = - 2a v ce = - 2v, i c = - 3a v ce = -2v, i c = - 2a v ce = - 2v, i c = - 3a 30 15 40 20 75 100 v ce (sat) * collector-emitter saturation voltage i c = - 2a, i b = - 0.2a i c = - 6a, i b = - 0.6a - 0.8 - 0.8 v v v be (on) * base-emitter on voltage v ce = - 2v, i c = - 2a - 1.5 v f t current gain bandwidth product v ce = - 1v, i c = - 500ma 3 12 mhz bd534/536/538 medium power linear and switching applications  low saturation voltage  complement to bd533, bd535 and bd537 respectively 1.base 2.collector 3.emitter 1 to-220
?2000 fairchild semiconductor international bd534/536/538 rev. a, february 2000 typical characteristics figure 1. dc current gain figure 2. base-emitter saturation voltage collector-emitter saturation voltage figure 3. safe operating area figure 4. power derating -0.01 -0.1 -1 -10 10 100 1000 v ce = -2v h fe , dc current gain i c [a], collector current -0.1 -1 -10 -0.01 -0.1 -1 v be (sat) v ce (sat) i c = 10 i b v be (sat)[v], v ce (sat)[v], saturation voltage i c [a], collector current -1 -10 -100 -1000 -0.1 -1 -10 -100 100 s bd538 bd536 bd534 10 s 1ms 10ms dc i c (max) i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80 p c [w], power dissipation t c [ o c], case temperature
4.50 0.20 9.90 0.20 1.52 0.10 0.80 0.10 2.40 0.20 10.00 0.20 1.27 0.10 ?.60 0.10 (8.70) 2.80 0.10 15.90 0.20 10.08 0.30 18.95max. (1.70) (3.70) (3.00) (1.46) (1.00) (45 ) 9.20 0.20 13.08 0.20 1.30 0.10 1.30 +0.10 ?.05 0.50 +0.10 ?.05 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] to-220 package demensions ?2000 fairchild semiconductor international rev. a, february 2000 bd534/536/538 dimensions in millimeters
?2000 fairchild semiconductor international rev. e trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. acex? bottomless? coolfet? crossvolt? e 2 cmos? fact? fact quiet series? fast ? fastr? gto? hisec? isoplanar? microwire? pop? powertrench ? qfet? qs? quiet series? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic? uhc? vcx? disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor international. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. no identification needed full production this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. obsolete not in production this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only.
careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging bd538 pnp epitaxial silicon transistor features back to top applications back to top contents ? features ? applications ? product status/pricing/packaging ? order samples ? qualification support z low saturation voltage z complement to bd533, bd535 and bd537 respectively medium power linear and switchin g datasheet download this datasheet e - mail this datasheet this page print version product product status pb-free status pricing* package type leads packing method package marking convention** bd538j full production $0.315 to - 220 3 bulk n/a bd538k full production $0.316 to - 220 3 bulk line 1: $y (fairchild logo) line 2: &3 line 3: bd538-k bd538ktu full production $0.316 to - 220 3 rail line 1: $y (fairchild logo) line 2: &3 line 3: bd538-k related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 2 product folder - fairch ild p/n bd538 - pnp e p itaxial silicon transisto r 16-au g -2007 mhtml:file://c:\temp\bd538ktu.mht
back to top qualification support click on a product for detailed qualification data back to top * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributor to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product bd538 is available. click here for more information . product bd538j bd538k bd538ktu ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 2 of 2 product folder - fairch ild p/n bd538 - pnp e p itaxial silicon transisto r 16-au g -2007 mhtml:file://c:\temp\bd538ktu.mht


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